A power MOSFET is a metal oxide semiconductor field effect transistor. It is a three-terminal, voltage controlled majority carrier device and has a source lead (S), drain lead (D) and gate lead (G) similar to emitter, collector and base of a transistor, respectively. The movement of the majority carriers in a MOSFET is controlled by […]
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Enhancement Type MOSFETs In this type of MOSFET, channel is formed after applying biasing hence it is named as enhancement type. This MOSFET is smaller in size, economical and provides better performance than depletion MOSFET. Figures 1(a) and (b) depict the cross-sectional view and circuit symbols of n-channel enhancement type MOSFET, respectively. The broken line
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MOSFET stands for metal oxide semiconductor field effect transistor. It is also called IGFET or insulated gate field effect transistor. It is an integrated circuit (IC) or a semiconductor chip. It is fabricated by VSLI using planar technology. The thickness of SiO2 layer is 1000 to 2000 Ao. The larger input resistance of the MOSFET
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There is a large number of ratings associated with thyristors. These ratings are in terms of voltage, current, power, temperature and derivatives of voltage and current and time to switch on and off. In practice, it may not be necessary to give consideration to each and every rating to make choice of a thyristor. Thyristor
In motor control circuits, a diode known as the freewheeling diode is connected across motor terminals to allow for dissipation of energy stored in motor inductance and to provide for continuity of motor current when the SCRs are blocked. It also provides protection against transient over voltages. Freewheeling Diode in Controlled Rectifier Energy Stored in