Power Electronics

Characteristics, Operation,  & Construction of IGBT

The insulated gate bipolar transistor (IGBT) combines the advantageous features of MOSFET (such as voltage control, fast switching) and BJT (such as low ON-state losses and high OFF-state voltage capability. These devices have near ideal characteristics for high voltage (>100V) and medium frequency (<20 kHz) applications. The IGBT is a three terminal device with Like […]

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Characteristics & Operation of Enhancement Type MOSFETs 

Enhancement Type MOSFETs  In this type of MOSFET, channel is formed after applying biasing hence it is named as enhancement type. This MOSFET is smaller in size, economical and provides better performance than depletion MOSFET. Figures 1(a) and (b) depict the cross-sectional view and circuit symbols of n-channel enhancement type MOSFET, respectively. The broken line

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